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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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29 pcs
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29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Junction Temperature | |
| MSL (Moisture Sensitivity Level) | |
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| Non-Repetitive Peak Forward Surge Current | |
| Operating Temperature | |
| Peak Forward Current | |
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| Reverse Recovery Time (trr) | |
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| Technology | |
| Voltage |
The Panasonic MA2S7840GL is a silicon epitaxial planar Schottky barrier diode designed for super high speed switching and small current rectification applications. It offers a low forward voltage of 550 mV at 100 mA, enabling efficient rectification in high-frequency circuits.
Key electrical ratings include a maximum reverse voltage of 30 V, average forward current of 100 mA, and peak forward current of 300 mA. The device exhibits a fast reverse recovery time of 2 ns, making it suitable for high-speed switching. Terminal capacitance is 20 pF at 0 V and 1 MHz.
The diode is housed in a compact SSMini2-F4 surface mount package (SC-79, SOD-523) with an anode and cathode pinout. It supports an operating temperature range up to 125 °C and storage from -55 to +125 °C. The part is RoHS3 compliant.
The typical forward voltage is 550 mV at a forward current of 100 mA.
The typical reverse recovery time is 2 ns under test conditions IF = IR = 100 mA, Irr = 0.1 IR, RL = 100 Ω.
The maximum reverse voltage is 30 V, and the repetitive peak reverse voltage is also 30 V.
It is available in a surface mount SC-79, SOD-523 package with supplier device package SSMini2-F4.
The average forward current is 100 mA, with a peak forward current of 300 mA and a non-repetitive surge current of 1 A.