SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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8,199 pcs
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8199 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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The MA2J1110G from Panasonic Electronic Components is a silicon epitaxial planar type switching diode designed for switching circuits. It offers a high breakdown voltage of 80V and a maximum forward current of 100mA. The diode also boasts a short reverse recovery time and small terminal capacitance, making it suitable for high-density mounting.
This component operates within a junction temperature range of -55 to 150°C and a storage temperature range of -55 to 150°C. The package type is SMini2-F3, which is a surface-mount package.
The MA2J1110G complies with the RoHS Directive (EU 2002/95/EC). Its electrical characteristics include a forward voltage of 0.95 to 1.20V at 100mA and a reverse current of 100nA at 75V. The terminal capacitance is rated between 0.6 and 1.2pF at 1MHz and 0V reverse voltage. The reverse recovery time is a maximum of 3ns under specific test conditions.
| Qty | Low | High |
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| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage for the MA2J1110G is 80V.
The maximum forward current for the MA2J1110G is 100mA.
The MA2J1110G is supplied in the SMini2-F3 package.
The reverse recovery time for the MA2J1110G is a maximum of 3ns.
The terminal capacitance of the MA2J1110G is between 0.6 and 1.2pF at 1MHz and 0V.
