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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60,000 pcs
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60000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MA2J11100L is a silicon epitaxial planar switching diode from Panasonic, designed for high-speed switching circuits. It features a maximum reverse voltage of 80V and a forward current of 100mA. The typical forward voltage is 0.95V at 100mA, with a maximum of 1.20V. The reverse recovery time is typically 3ns, enabling fast switching. Terminal capacitance is typically 0.6pF (max 1.2pF) at 0V bias. Reverse current is 100nA maximum at 75V. The diode can handle non-repetitive peak forward surge current up to 500mA for 1 second.
Packaged in the surface mount SMini2-F1 (SC-76) package, it allows for high-density mounting. The operating junction temperature range is up to 150°C, with storage temperature from -55°C to +150°C. The device is RoHS compliant (EU 2002/95/EC).
This diode is suitable for various general-purpose switching applications, including high-speed logic circuits, protection circuits, and signal switching. Its small package and low capacitance make it ideal for space-constrained designs.
Maximum reverse voltage is 80V.
Maximum forward current is 100mA.
Typical forward voltage is 0.95V, maximum 1.20V at 100mA.
Typical reverse recovery time is 3ns (IF=10mA, VR=6V, Irr=0.1IR, RL=100Ω).
Surface mount SC-76 (SMini2-F1).
Maximum reverse current is 100nA at 75V reverse voltage.
Typical terminal capacitance is 0.6pF, maximum 1.2pF at 0V bias, 1MHz.