| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Interface | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Speed | |
| Supplier Device Package | |
| Technology | |
| Voltage Supply |
The M5M418160BJ-7 from Mitsubishi Electric is a 1Mx16 Dynamic Random Access Memory (DRAM) component. It utilizes high-performance CMOS technology for efficient operation.
This DRAM offers a 70ns access time and a 5V operating voltage. It supports Fast Page Mode and EDO (Extended Data Out) functionality, making it suitable for various memory applications. The component is designed for surface mounting and comes in a 42-pin SOJ package.
Key specifications include a 1Mx16 organization, 70ns speed, and parallel interface. The operating temperature range is from 0°C to 70°C. This DRAM is a reliable choice for systems requiring standard memory expansion.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The M5M418160BJ-7 is organized as 1M x 16 bits.
The access time is 70 ns.
The operating voltage is 5 V.
The operating temperature range is 0°C to 70°C.
The M5M418160BJ-7 is housed in a surface-mount SOJ-42 package.
Yes, the M5M418160BJ-7 supports fast page mode.
Yes, the M5M418160BJ-7 supports EDO (Extended Data Out).