| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Mitsubishi Electric M5M41001AL is a 1M x 1 bit Dynamic Random Access Memory (DRAM) component. It operates using CMOS technology and supports Nibble Mode access. This memory IC is offered in various package configurations, including DIP, SOJ, ZIP, and PZIP, catering to different board space and assembly requirements. The M5M41001AL is suitable for applications requiring reliable and efficient memory solutions.
Key specifications include a 1M x 1 organization and a typical access time of 80 ns. The component is designed for general-purpose memory applications where density and speed are important factors. Its availability in through-hole mounting types facilitates integration into existing or new circuit designs.
This DRAM component is part of Mitsubishi Electric's memory product line, designed to meet the demands of various electronic systems. The different package options provide flexibility for designers to choose the most appropriate form factor for their specific application needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The M5M41001AL has a memory organization of 1M x 1 bit.
The M5M41001AL is a Dynamic Random Access Memory (DRAM).
The access time for the M5M41001AL is 80 ns.
The M5M41001AL uses CMOS technology.
The M5M41001AL is available in ZIP, PZIP, SOJ, and DIP packages.