| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | 9547G/ | On Request | On Request |
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| Manufacturer Name |
The M5M41000BJ is a 1M x 1 DRAM (Dynamic Random Access Memory) component manufactured by Mitsubishi Electric (MIT). This component utilizes CMOS technology for efficient operation.
Key specifications include a memory organization of 1M x 1 bit, providing a total capacity of 1,048,576 bits. The part is available in different speed grades, with access times as fast as 7ns, 10ns, and 8ns depending on the specific variant.
The M5M41000BJ is offered in two primary package types: SOJ (Small Outline J-Lead) with 26 pins and PDSO20 (Plastic Dual Small Outline Package) with 20 pins. These package options cater to different board space and assembly requirements.
This DRAM is suitable for various memory applications where fast access and reliable data storage are essential. Its CMOS technology contributes to lower power consumption compared to older technologies.
The M5M41000BJ is a DRAM (Dynamic Random Access Memory).
The memory organization is 1M x 1 bit.
The fastest access time available for the M5M41000BJ is 7ns.
The M5M41000BJ is available in SOJ and PDSO20 package types.
The M5M41000BJ uses CMOS technology.