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13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The M5K4164ANP-12 is a 65,536-word by 1-bit dynamic RAM manufactured by Mitsubishi Electric using a high-performance N-channel silicon-gate MOS process. It is designed for large-capacity memory systems requiring high speed, low power dissipation, and cost-effectiveness.
Key features include a maximum access time of 120ns and a cycle time of 220ns. It operates on a single 5V ±10% power supply and has low standby power dissipation of 22mW (max) and low operating power dissipation of 300mW (max). The device supports various operations such as read, write, read-modify-write, RAS-only refresh, and page-mode capabilities.
Fabricated with double-layer polysilicon process technology and a single-transistor dynamic storage cell, it provides high circuit density. The multiplexed address inputs allow for a standard 16-pin package configuration. The output is three-state and directly TTL-compatible. This RAM is interchangeable with Mostek's MK4564 and Motorola's MCM6665 in pin configuration.
Applications include main memory units for computers. The DIP package and TTL-compatible inputs make it suitable for various system designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating supply voltage is 5 V.
The device is housed in a 16-pin DIP (Dual In-line Package).
The operating temperature range is 0°C to 70°C.
The maximum access time is 120 ns.
The minimum cycle time is 220 ns.
Typical power dissipation is 175 mW, with maximum operating power dissipation of 300 mW and standby power dissipation of 22 mW.