| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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69 pcs
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69 pcs | On Request | 1 | On Request | On Request | 95 | On Request | On Request |
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The Mitsubishi Electric M5K4164ANP is a 65,536-bit (65,536-word by 1-bit) dynamic RAM designed for high-speed, low-power memory systems. Fabricated using an N-channel silicon-gate MOS process, it provides high circuit density and reduced costs through double-layer polysilicon technology and single-transistor dynamic storage cells.
Key electrical specifications include an access time of 120 ns and a cycle time of 220 ns for the -12 variant, and 150 ns access time and 260 ns cycle time for the -15 variant. It operates on a single 5V ±10% power supply, with low standby power dissipation of 22mW (max) and low operating power dissipation of 300mW (max). The device features TTL-compatible inputs and a three-state, TTL-compatible output.
This dynamic RAM supports various operations including read, write, read-modify-write, RAS-only refresh, and page-mode capabilities. It is packaged in a standard 16-pin DIP package, suitable for through-hole mounting. The M5K4164ANP is interchangeable with Mostek's MK4564 and Motorola's MCM6665 in pin configuration, making it a versatile option for memory system designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.03 | $10.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The M5K4164ANP has a maximum access time of 120 ns for the -12 variant and 150 ns for the -15 variant.
The M5K4164ANP operates on a single 5V ±10% power supply.
The M5K4164ANP is available in a 16-pin DIP package.
The operating temperature range is from 0°C to 70°C.