| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,362 pcs
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3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology M58LT256KST8ZA6E is a 256 Mbit NOR Flash memory designed for various applications requiring reliable non-volatile storage. It offers a memory organization of 16M x 16 and supports a synchronous burst read mode with a clock frequency of up to 52 MHz.
This device operates with a supply voltage ranging from 1.7V to 2.0V for programming, erasing, and reading, with I/O buffers requiring 2.7V to 3.6V. It provides a fast program time of 5 µs typical and a random access time of 85 ns. The memory array is organized into multiple 16 Mbit banks, enabling dual operations such as programming/erasing in one bank while reading from others.
Packaged in a 64-TBGA (10x13 mm) format, the M58LT256KST8ZA6E is designed for surface mounting. It operates within an industrial temperature range of -40°C to 85°C (TA). The memory features block protection and software security functions, including a 64-bit unique device number and 2112 bits of user-programmable OTP cells.
With 100,000 program/erase cycles per block, this NOR Flash memory is suitable for applications demanding durability and performance. It also includes CFI (Common Flash Interface) support for compatibility.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Core supply voltage is 1.7V to 2.0V, I/O supply voltage is 2.7V to 3.6V.
The device is offered in a 64-TBGA (10x13) package for surface mount mounting.
-40°C to 85°C (TA).
52 MHz in synchronous burst read mode.
85 ns typical, 70 ns minimum.
256 Mb organized as 16M x 16 bits.
100,000 cycles per block.