| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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133 pcs
|
133 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request | |
|
18 pcs
|
18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The M54567P from Mitsubishi Electric is a versatile 4-unit Darlington transistor array designed for high-current driving applications. Each circuit consists of PNP and NPN transistors, featuring integrated spike-killer clamping diodes between the output pin and the COM pin. This device is capable of handling a maximum collector current of 1.5A and offers a high breakdown voltage of 50V (BVCEO).
The input stage includes an 8kΩ resistance, making it suitable for driving with NMOS IC outputs. The operating temperature range is from -20°C to +75°C, ensuring reliable performance in various environments. The M54567P is available in a DIP package, while the M54567FP variant comes in a small flat package for space-saving designs.
Applications for the M54567P include driving relays and printers, digit drives for indication elements like LEDs and lamps, and general power amplification. Its robust design and specifications make it a suitable choice for demanding electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the M54567P is 1.5A.
The M54567P has a minimum breakdown voltage (BVCEO) of 50V.
The operating temperature range for the M54567P is -20°C to +75°C.
The M54567P is available in a DIP package, and the M54567FP variant is in a small flat package.
The M54567P is used for driving relays and printers, digit drives for indication elements like LEDs and lamps, and power amplification.