| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8 pcs
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8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The M54562P from Mitsubishi Electric is an eight-circuit, output-sourcing Darlington transistor array. It is constructed with PNP and NPN transistors, offering high-current driving capabilities with low input current supply.
Key electrical specifications include a high breakdown voltage (BVCEO) of 50V and a maximum output current (Io) of up to 500mA. The device operates over a wide temperature range from -20°C to +75°C. It includes output clamping diodes for protection and is suitable for driving loads such as relays, printers, LEDs, and small motors.
The transistor array features input resistances of 8.5k Ω and can accept input voltages up to 30V. The supply voltage (VS) can be as high as 50V. The M54562P is housed in a DIP package and is designed for through-hole mounting.
Applications for the M54562P include interfacing between MOS-bipolar logic systems and various output devices like solenoids and motors, as well as direct driving of relays, printers, and displays.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The M54562P has a breakdown voltage (BVCEO) of at least 50V.
The datasheet specifies a maximum output current of 500mA, while the manufacturer page indicates 350mA.
The M54562P operates within a temperature range of -20°C to +75°C.
The M54562P is available in a DIP package.
The M54562P features eight independent circuits.