| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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140 pcs
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140 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The M54526FP is a seven-circuit Darlington transistor array manufactured by Mitsubishi Electric. Each circuit consists of NPN Darlington transistors and includes integrated spike-killer clamping diodes between the output pin and the COM pin. This configuration allows for high-current driving with very low input current supply.
Key electrical specifications include a high breakdown voltage (BV CEO) of 50V and a maximum collector current (Ic(max)) of 500mA per circuit. The device operates over a wide temperature range from -20°C to +75°C. It is suitable for driving relays and printers, digit drives for indication elements like LEDs and lamps, and MOS-bipolar logic IC interfaces.
The M54526FP is available in a molded small flat package, designed for space-saving applications. The output transistor emitters are connected to the GND pin, and the seven circuits share common COM and GND pins. The input transistors have a base resistance of 10.5kΩ between the base and the input pin.
The maximum collector current for the M54526FP is 500mA.
The M54526FP has an operating temperature range of -20°C to +75°C.
The collector-emitter breakdown voltage of the M54526FP is a minimum of 50V.
The M54526FP is supplied in a 16-SOIC (0.154", 3.90mm) package.
The typical DC amplification factor (hFE) for the M54526FP is 2500 under test conditions of V CE = 4V and I C = 350mA at Ta = 25°C.