| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature | |
| Power Dissipation | |
| Storage Temperature |
The M54517P from Mitsubishi Electric is a seven-circuit Darlington transistor array utilizing NPN transistors. This integrated circuit is engineered for high-current driving capabilities with low input current supply requirements.
Key electrical specifications include a medium breakdown voltage of 25V (BVCEO) and a high maximum collector current (Ic(max)) of 400mA. The device operates effectively with PMOS IC outputs and offers a wide operating temperature range from -20°C to +75°C.
Applications for the M54517P include driving relays and printers, digit drives for indication elements like LEDs and lamps, and interfacing with MOS-bipolar logic ICs. The internal circuitry includes 20kΩ resistance between input transistor bases and input pins, with all output transistor emitters connected to the GND pin.
The M54517P is available in a 16P4 package type.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the M54517P is 400mA.
The collector-emitter voltage rating for the M54517P is 25V.
The M54517P operates within a temperature range of -20°C to +75°C.
The M54517P is supplied in a 16P4 package.