| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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96 pcs
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96 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The M29W800DT70N6E is an 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) boot block flash memory designed for 3V supply applications. It features a supply voltage range of 2.7V to 3.6V for program, erase, and read operations.
Key electrical specifications include an access time of 70ns and a typical programming time of 10µs per byte/word. The device is organized into 19 memory blocks, comprising 1 boot block, 2 parameter blocks, and 16 main blocks. It supports erase suspend and resume modes, allowing read and program operations on other blocks during an erase suspend.
This flash memory offers a common flash interface with a 64-bit security code and low power consumption with standby and automatic standby modes. It boasts 100,000 program/erase cycles per block. The M29W800DT70N6E is available in multiple package types, including TSOP48 (12 x 20 mm), FBGA (6 x 8 mm), and SO44.
Electronic signature details include a manufacturer code of 0020h, with device codes M29W800DT (Top) as 22D7h and M29W800DB (Bottom) as 225Bh.
2.7V to 3.6V, with a nominal of 3V.
70ns.
10µs per byte/word typical.
100,000 cycles per block.
A 64-bit security code.
TSOP48, FBGA, and SO44 packages.
19 memory blocks: 1 boot block, 2 parameter blocks, and 16 main blocks.