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M29W800DT70N6E The Micron Technology M29W800DT70N6E is an 8Mbit parallel NOR flash memory IC. It features a 70ns access time and operates within a 2.7V to 3.6V supply voltage range.
Mfr Part #:

M29W800DT70N6E

Available from 4 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology M29W800DT70N6E is an 8Mbit parallel NOR flash memory IC. It features a 70ns access time and operates within a 2.7V to 3.6V supply voltage range.
✓ Total Stock: 61,545 pcs
$ Price Range: $1.28

M29W800DT70N6E Available from 4 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
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43,048 pcs
On Request
43048 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
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12,100 pcs
On Request
12100 pcs On Request 1 On Request On Request 2010 On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,245 pcs
On Request
5245 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,152 pcs
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1152 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

M29W800DT70N6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time
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M29W800DT70N6E Description

Short technical summary and product information.

The M29W800DT70N6E from Micron Technology is an 8-Mbit parallel NOR flash memory device. It offers a capacity of 8Mbit, organized as 1M x 8 or 512K x 16.

 

Key electrical specifications include a supply voltage range of 2.7V to 3.6V for program, erase, and read operations. The device provides an access time of 70 ns and a programming time of approximately 10 µs per byte/word. It is designed for reliability with 100,000 program/erase cycles per block.

 

This flash memory features 19 memory blocks, including one boot block, two parameter blocks, and sixteen main blocks. It supports erase suspend and resume modes, allowing for read and program operations on other blocks during an erase cycle. The common flash interface includes a 64-bit security code.

 

The M29W800DT70N6E is supplied in a 48-TSOP I package, suitable for surface mount applications. Its operating temperature range is -40°C to 85°C (TA).

M29W800DT70N6E Quick Information

Product Type: Flash Memory
Canonical Name: M29W800DT70N6E 8-Mbit Boot Block Flash Memory
Subcategory: Parallel NOR Flash

M29W800DT70N6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W800DT70N6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W800DT70N6E Features

  • 8Mbit parallel NOR flash memory.
  • 70 ns access time.
  • 2.7 V to 3.6 V supply voltage.
  • 100,000 program/erase cycles per block.
  • 48-TSOP I surface mount package.

M29W800DT70N6E Applications

  • Suitable for embedded systems.
  • Used in data storage applications.
  • Ideal for firmware storage.
  • Supports boot block operations.

M29W800DT70N6E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the M29W800DT70N6E?

The operating voltage is 2.7 V to 3.6 V for program, erase, and read operations.

What is the access time of the M29W800DT70N6E?

The access time is 70 ns.

What is the operating temperature range of the M29W800DT70N6E?

The operating temperature range is -40°C to 85°C.

What package is the M29W800DT70N6E available in?

The M29W800DT70N6E comes in a surface-mount 48-TSOP I package (48-TFSOP).

What memory organization does the M29W800DT70N6E have?

It is organized as 1M x 8 or 512K x 16.

What is the program/erase endurance of the M29W800DT70N6E?

It supports 100,000 program/erase cycles per block.

What is the typical programming time for the M29W800DT70N6E?

The typical programming time is 10 µs per byte/word.

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