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M29W800DT45N6E The Micron Technology M29W800DT45N6E is an 8Mbit parallel flash memory. It operates with a supply voltage of 2.7V to 3.6V and features an access time of 45 ns.
Mfr Part #:

M29W800DT45N6E

Available from 1 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology M29W800DT45N6E is an 8Mbit parallel flash memory. It operates with a supply voltage of 2.7V to 3.6V and features an access time of 45 ns.
✓ Total Stock: 5,000 pcs
$ Price Range: $1.28

M29W800DT45N6E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

M29W800DT45N6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Supply Voltage
Technology
Voltage
Write Cycle Time
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M29W800DT45N6E Description

Short technical summary and product information.

The Micron Technology M29W800DT45N6E is an 8Mbit non-volatile flash memory designed for parallel interface applications. It operates within a supply voltage range of 2.7V to 3.6V, offering an access time of 45 ns and a write cycle time of 45 ns. This memory device is organized as 1M x 8 or 512K x 16 bits and utilizes NOR flash technology.

 

The component is specified for an operating temperature range of -40°C to 85°C (TA). It features a surface mount mounting type and comes in a 48-TSOP I package, also noted as 48-TFSOP (0.724", 18.40mm Width).

 

Key features include embedded byte/word program algorithms, erase suspend and resume modes, and a 64-bit security code. The device supports unlock bypass program commands for faster programming and has 100,000 program/erase cycles per block. It also includes electronic signatures for identification.

M29W800DT45N6E Quick Information

Product Type: Flash Memory
Canonical Name: M29W800DT45N6E 8Mbit Parallel FLASH - NOR Memory
Subcategory: NOR Flash

M29W800DT45N6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W800DT45N6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W800DT45N6E Features

  • 8Mbit parallel flash memory
  • 45ns access time
  • 2.7V to 3.6V supply voltage
  • Surface mount 48-TSOP I package
  • 100,000 program/erase cycles

M29W800DT45N6E Applications

  • Embedded systems requiring non-volatile storage
  • Industrial control applications
  • Consumer electronics devices
  • Automotive systems

M29W800DT45N6E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the M29W800DT45N6E?

The operating voltage range is 2.7V to 3.6V for program, erase, and read operations.

What packages are available for this device?

The M29W800DT45N6E is available in surface mount packages: 48-TSOP I, TFBGA48 (ZE), TSOP48 (N), SO44 (M), and 48-TFSOP.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C (TA).

What is the memory size and organization?

The memory size is 8 Mbit, organized as 1M x 8 or 512K x 16.

What is the access time?

The access time is 45 ns (also available in 70 ns and 90 ns versions).

How many program/erase cycles does it support?

It supports 100,000 program/erase cycles per block.

What is the memory interface?

The memory interface is parallel.

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