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M29W800DB70ZE6E The Micron Technology M29W800DB70ZE6E is an 8Mbit parallel NOR flash memory device. It operates with a supply voltage range of 2.7V to 3.6V and features a 70ns access time.
Mfr Part #:

M29W800DB70ZE6E

Available from 1 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology M29W800DB70ZE6E is an 8Mbit parallel NOR flash memory device. It operates with a supply voltage range of 2.7V to 3.6V and features a 70ns access time.
✓ Total Stock: 1,782 pcs
$ Price Range: $1.28

M29W800DB70ZE6E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,782 pcs
On Request
1782 pcs On Request 1 48 On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

M29W800DB70ZE6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time
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M29W800DB70ZE6E Description

Short technical summary and product information.

The M29W800DB70ZE6E from Micron Technology is an 8-Mbit parallel NOR flash memory, organized as 1M x 8 or 512K x 16 bits. This non-volatile memory operates with a supply voltage between 2.7V and 3.6V, suitable for program, erase, and read operations.

 

Key electrical characteristics include an access time of 70 ns and a programming time of approximately 10 µs per byte/word. The device features 19 memory blocks, including one boot block, two parameter blocks, and 16 main blocks. It also incorporates an embedded byte/word program controller and supports erase suspend and resume modes, allowing for read and program operations on other blocks during an erase cycle.

 

Designed for surface mounting, the M29W800DB70ZE6E comes in a 48-TFBGA (6x8 mm) package. It offers a common flash interface and a 64-bit security code. The operating temperature range is -40°C to 85°C (TA), making it suitable for a variety of environmental conditions. With 100,000 program/erase cycles per block, this flash memory provides reliable data storage for embedded systems.

M29W800DB70ZE6E Quick Information

Product Type: Flash Memory
Canonical Name: M29W800DB70ZE6E 8Mbit Parallel NOR Flash Memory
Subcategory: NOR Flash

M29W800DB70ZE6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W800DB70ZE6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W800DB70ZE6E Features

  • 8Mbit parallel NOR flash memory.
  • 70ns access time.
  • 2.7V to 3.6V supply voltage.
  • 48-TFBGA surface mount package.
  • 100,000 program/erase cycles per block.

M29W800DB70ZE6E Applications

  • Suitable for embedded systems.
  • Ideal for data storage applications.
  • Used in systems requiring non-volatile memory.
  • Supports read/program during erase suspend.

M29W800DB70ZE6E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the supply voltage range?

2.7V to 3.6V.

What is the access time?

70 ns.

What is the operating temperature range?

-40°C to 85°C.

What is the memory size and organization?

8Mbit organized as 1M x 8 or 512K x 16.

What is the package type?

48-TFBGA (6x8).

How many program/erase cycles does it support?

100,000 per block.

What is the programming time?

10 µs per byte/word typical.

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