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M29W800DB70N6E The STMicroelectronics M29W800DB70N6E is an 8-Mbit parallel NOR flash memory. It operates with a supply voltage range of 2.7V to 3.6V and features access times as low as 45 ns.
Mfr Part #:

M29W800DB70N6E

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics M29W800DB70N6E is an 8-Mbit parallel NOR flash memory. It operates with a supply voltage range of 2.7V to 3.6V and features access times as low as 45 ns.
✓ Total Stock: 15,761 pcs
$ Price Range: $1.28

M29W800DB70N6E Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
15,661 pcs
On Request
15661 pcs On Request 1 On Request On Request 11+10+08+ On Request On Request
Hybrid Electronics ✓
Non-Authorised Inventory information
100 pcs
On Request
100 pcs On Request 1 On Request On Request 1312 On Request On Request
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M29W800DB70N6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Halogen Free
Lead Spacing
Lead Style
SVHC Present
Storage Temperature
Supply Voltage
Tape & Reel
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M29W800DB70N6E Description

Short technical summary and product information.

The STMicroelectronics M29W800DB70N6E is an 8-Mbit parallel NOR flash memory device. It offers a flexible memory organization, supporting either 1 Mbit x 8 or 512 Kbits x 16 configurations, with a dedicated boot block.

 

Key electrical characteristics include a supply voltage range of 2.7V to 3.6V for program, erase, and read operations. Access times are available at 45 ns, 70 ns, and 90 ns. The device features embedded byte/word program algorithms with a typical programming time of 10 µs per byte/word. It supports erase suspend and resume modes, allowing read and program operations on other blocks during an erase cycle. The flash memory boasts 100,000 program/erase cycles per block.

 

This flash memory is available in multiple package options, including TFBGA48 (6 x 8 mm), TSOP48 (12 x 20 mm), and SO44. These packaging options cater to various board space and assembly requirements.

 

The M29W800DB70N6E includes a 64-bit security code and electronic signature for identification. Its low power consumption features include standby and automatic standby modes.

M29W800DB70N6E Quick Information

Product Type: Flash Memory
Series: M29W800
Canonical Name: 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V Supply Flash Memory
Subcategory: NOR Flash

M29W800DB70N6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

M29W800DB70N6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W800DB70N6E Features

  • 8-Mbit capacity, 1 Mbit x 8 or 512 Kbits x 16 organization.
  • Supply voltage from 2.7 V to 3.6 V.
  • Fast access times down to 45 ns.
  • 100,000 program/erase cycles per block.
  • Available in TFBGA48, TSOP48, and SO44 packages.

M29W800DB70N6E Applications

  • Embedded systems requiring non-volatile storage.
  • Boot code storage and firmware updates.
  • Data logging and configuration storage.
  • Industrial control applications.
  • Consumer electronics devices.

M29W800DB70N6E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the supply voltage for the M29W800DB70N6E?

The supply voltage for the M29W800DB70N6E is 2.7 V to 3.6 V for program, erase, and read operations.

What are the available access times for this flash memory?

Access times for the M29W800DB70N6E are 45 ns, 70 ns, and 90 ns.

What is the typical programming time per byte/word?

The typical programming time is 10 µs per byte/word.

How many memory blocks does the M29W800DB70N6E have?

The device has 19 memory blocks, consisting of 1 boot block, 2 parameter blocks, and 16 main blocks.

What is the endurance rating of the M29W800DB70N6E?

The flash memory supports 100,000 program/erase cycles per block.

What package options are available for the M29W800DB70N6E?

Available package options include TFBGA48 (6 x 8 mm), TSOP48 (12 x 20 mm), and SO44.

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