M29W800DB70N6E The M29W800DB70N6E is an 8Mbit parallel NOR flash memory from Micron Technology. It offers a 70ns access time and operates from a 2.7V to 3.6V supply.
Mfr Part #:

M29W800DB70N6E

Available from 2 distributors
Mfr Name: Micron Technology
Micron Technology
The M29W800DB70N6E is an 8Mbit parallel NOR flash memory from Micron Technology. It offers a 70ns access time and operates from a 2.7V to 3.6V supply.
Total Stock: 37,063 pcs
$ Price Range: $1.28

M29W800DB70N6E Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30,133 pcs
30133 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,930 pcs
6930 pcs On Request 1 On Request On Request On Request On Request On Request

M29W800DB70N6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage
Write Cycle Time

M29W800DB70N6E Description

Short technical summary and product information.

The Micron Technology M29W800DB70N6E is an 8-Mbit parallel NOR flash memory device designed for a wide range of applications requiring reliable non-volatile storage. It operates with a supply voltage ranging from 2.7V to 3.6V, making it suitable for various embedded systems.

 

Key electrical characteristics include an access time of 70 ns, ensuring efficient data retrieval. The memory is organized as 1M x 8 or 512K x 16, providing flexibility for different system architectures. Programming and erasing operations are supported by an embedded controller with typical programming times of 10 μs per byte/word.

 

This flash memory features 19 distinct memory blocks, including one boot block, two parameter blocks, and sixteen main blocks. It supports erase suspend and resume modes, allowing read and program operations on other blocks during an erase cycle. The device also includes a 64-bit security code for enhanced data protection.

 

Packaged in a 48-TSOP I format, the M29W800DB70N6E is designed for surface mounting. It operates within a temperature range of -40°C to 85°C (TA), ensuring performance in diverse environmental conditions. The component boasts 100,000 program/erase cycles per block, contributing to its durability and longevity.

M29W800DB70N6E Quick Information

Product Type: Flash Memory
Series: M29W
Canonical Name: 8Mbit Parallel NOR Flash Memory
Subcategory: NOR Flash

M29W800DB70N6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W800DB70N6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W800DB70N6E Features

  • 8Mbit parallel NOR flash memory.
  • 70 ns access time for fast reads.
  • 2.7V to 3.6V operating supply voltage.
  • 100,000 program/erase cycles per block.
  • 48-TSOP I surface mount package.

M29W800DB70N6E Applications

  • Ideal for embedded system storage.
  • Suitable for firmware storage needs.
  • Used in data logging applications.
  • Applicable for boot code storage.

M29W800DB70N6E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the M29W800DB70N6E?

The M29W800DB70N6E has a memory size of 8 Mbit.

What is the access time of this Flash memory?

The access time is 70 ns.

What is the operating voltage range?

The supply voltage range is 2.7 V to 3.6 V for program, erase, and read operations.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C.

What package is the M29W800DB70N6E available in?

It is available in a 48-TSOP I surface mount package.

How many program/erase cycles does it support?

It supports 100,000 program/erase cycles per block.

What is the memory organization?

The memory organization is 1M x 8 or 512K x 16.

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