| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
350 pcs
|
350 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The M29W800DB70N6 is an 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) boot block flash memory from Micron Technology. It supports a supply voltage range of 2.7 V to 3.6 V for program, erase, and read operations.
Key electrical specifications include access times of 45 ns, 70 ns, and 90 ns, with a typical programming time of 10 µs per byte/word. The device features 19 memory blocks, including one boot block, two parameter blocks, and sixteen main blocks. It also includes an embedded program/erase controller and supports erase suspend and resume modes.
This flash memory offers a common flash interface and a 64-bit security code. It is available in multiple package types: TFBGA48 (6 x 8 mm), TSOP48 (12 x 20 mm), and SO44. The memory is designed for applications requiring reliable non-volatile storage with efficient programming and erasing capabilities.
2.7 V to 3.6 V
TSOP48 surface mount package
8 Mbit
45 ns, 70 ns, or 90 ns
100,000 cycles per block
Includes a 64-bit security code
10 µs per byte/word