| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,479 pcs
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5479 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The M29W640GB70NB6E from Micron Technology is a high-performance Parallel NOR Flash memory device with a density of 64Mbit. Designed for reliable data storage, it operates within a voltage range of 2.7V to 3.6V, making it suitable for various embedded systems.
This memory component offers a fast access time of 70ns and a write cycle time of 70ns, ensuring efficient data transfer. The memory organization is available as 8M x 8 or 4M x 16, providing flexibility for different application requirements. Its technology is specifically FLASH - NOR, known for its read performance and reliability.
The M29W640GB70NB6E is packaged in a 56-TSOP (56-TFSOP with 0.724" width) and utilizes a surface mount type for integration into printed circuit boards. The operating temperature range is from -40°C to 85°C, suitable for demanding environmental conditions. This component is RoHS3 compliant and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 64 Mbit.
The access time is 70 ns.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
It is in a 56-TSOP package, specifically a 56-TFSOP (0.724", 18.40mm Width).
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.