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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology M29W400FB55N3E is a 4Mbit parallel NOR Flash memory device designed for various embedded applications. It offers a fast access time of 55 ns and a programming/erase cycle endurance of 100,000 cycles per block.
This memory IC operates with a supply voltage ranging from 2.7V to 3.6V, making it suitable for a wide array of electronic systems. The memory is organized as 512K x 8 or 256K x 16 bits, providing flexibility for different data storage needs. It supports common Flash interface commands and features embedded program/erase controllers.
The M29W400FB55N3E is available in a 48-TSOP I surface-mount package, with dimensions of 12 x 20 mm. Its operating temperature range is -40°C to 125°C (TA), ensuring reliable performance in demanding environments. The device also includes features like erase suspend and resume modes for efficient operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The M29W400FB55N3E has a memory size of 4 Mbit.
The operating voltage range is 2.7V to 3.6V.
The access time is 55 ns.
The operating temperature range is -40°C to 125°C.
The M29W400FB55N3E is available in a 48-TSOP I package and a 48-TFSOP (0.724", 18.40mm Width) package.
Each block is rated for 100,000 program/erase cycles.
The memory organization is 512K x 8 or 256K x 16.