| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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598 pcs
|
598 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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The M29W400DB55N6 is a 4 Mbit (512 Kb x 8 or 256 Kb x 16) NOR Flash memory device from Micron Technology Inc. It operates with a supply voltage ranging from 2.7 V to 3.6 V for program, erase, and read operations.
Key features include access times of 45, 55, or 70 ns, and a programming time of typically 10 μs per byte/word. The memory is organized into 11 blocks: one boot block, two parameter blocks, and eight main blocks. It supports Erase Suspend and Resume modes, allowing for program operations on other blocks during an erase suspension.
This Flash memory is designed for reliability with 100,000 program/erase cycles per block. It is available in a TSOP48 package and is rated for automotive device grade 3, operating within a temperature range of -40 °C to 125 °C.
The M29W400DB55N6 is suitable for applications requiring non-volatile storage with robust read and write capabilities in demanding environments.
2.7 V to 3.6 V.
TSOP48.
-40 °C to 125 °C.
45 ns, 55 ns, and 70 ns.
10 µs per byte/word typical.
11 memory blocks, including 1 boot block, 2 parameter blocks, and 8 main blocks.
100,000 cycles per block.