| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,222 pcs
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3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The M29W400DB55N6 from Micron Technology is a 4 Mbit parallel NOR Flash memory device. It offers a memory organization of 512K x 8 or 256K x 16, providing flexibility for various applications.
This flash memory operates with a supply voltage ranging from 2.7V to 3.6V, making it suitable for a wide array of electronic systems. Key electrical characteristics include an access time of 55 ns and a write cycle time of 55 ns. The device is designed for reliable performance with 100,000 program/erase cycles per block.
Packaged in a 48-TSOP I format with surface mount mounting type, the M29W400DB55N6 is designed for integration into compact electronic designs. It operates within a temperature range of -40°C to 85°C.
This component is part of the M29W400DB family, offering boot block, parameter block, and main block memory configurations. Its features support efficient programming and erasing operations, including Erase Suspend and Resume modes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 2.7V to 3.6V for program, erase, and read operations.
The M29W400DB55N6 is available in a 48-TSOP I package (also 48-TFSOP) for surface mount mounting.
The operating temperature range is -40°C to 85°C (TA), with an automotive temperature range of -40°C to 125°C.
The access time is 55 ns.
The memory size is 4 Mbit, organized as 512K x 8 or 256K x 16.
It supports 100,000 program/erase cycles per block.
It uses FLASH - NOR technology.