| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,329 pcs
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3329 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The M29W320DB70N6 is a 32 Mbit parallel NOR Flash memory from Micron Technology Inc., operating with a 3V supply. This memory device supports both 4Mbx8 and 2Mbx16 configurations and features non-uniform parameter blocks with boot block capability. It is designed for program, erase, and read operations within a supply voltage range of 2.7V to 3.6V.
Key electrical characteristics include access times of 70, 80, and 90 ns, and a typical programming time of 10 µs per byte/word. The device contains 67 memory blocks, including one boot block and 64 main blocks, along with 2 parameter blocks. It features an embedded program/erase controller and supports Erase Suspend and Resume modes, allowing read and program operations on other blocks during an erase suspension. An Unlock Bypass Program command facilitates faster production batch programming.
The M29W320DB70N6 is available in TSOP48 and TFBGA48 packages. It offers 100,000 program/erase cycles per block and includes a 64-bit security code. Automotive grade parts are also available.
32 Mbit.
2.7V to 3.6V for program, erase, and read.
70 ns to 90 ns.
100,000 cycles per block.
TSOP48 and TFBGA48.
Yes, with optional 12V fast program voltage.
67 blocks.