| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,232 pcs
|
7232 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature |
The M29W320DB70N6 from STMicroelectronics is a 32 Mbit Flash Memory, available in configurations of 4Mbx8 or 2Mbx16. It features non-uniform parameter blocks and boot blocks, operating with a supply voltage from 2.7V to 3.6V for program, erase, and read operations.
Key electrical characteristics include access times of 70, 80, and 90 ns, with a typical programming time of 10µs per byte/word. The memory is organized into 67 blocks: 1 Boot Block, 2 Parameter Blocks, and 64 Main Blocks. It supports Erase Suspend and Resume modes, allowing read and program operations on other blocks during erase.
This Flash Memory offers a high endurance of 100,000 program/erase cycles per block. It is available in TSOP48 and TFBGA48 packages, both suitable for surface mounting. The device also includes a 64-bit security code and supports optional 12V fast programming.
RoHS3 compliant and Moisture Sensitivity Level 1, the M29W320DB70N6 is designed for reliable performance in various applications requiring non-volatile storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V for program, erase, and read operations.
70ns minimum, 80ns typical, and 90ns maximum.
TSOP48 (12x20mm) and TFBGA48, both surface mount.
10µs per byte or word typical.
100,000 program/erase cycles per block.
Yes, with an optional 12V supply for fast program.
22CBh.