| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,027 pcs
|
6027 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Micron Technology M29W256GL7AN6E is a 256Mbit embedded Parallel NOR Flash memory. It utilizes a 65nm single-level cell (SLC) process technology and offers a memory interface of Parallel.
Key electrical specifications include a supply voltage range of 2.7V to 3.6V, an I/O buffer voltage of 1.65V to 3.6V, and a random access time of 70ns. The memory organization is 32M x 8 or 16M x 16. It supports fast program commands with a 32-word write buffer and enhanced buffered program commands with a 256-word buffer. Program time is typically 16µs per byte/word, with chip program times of 10s (with V PPH) and 16s (without V PPH).
This NOR Flash memory is designed for reliability, offering 100,000 minimum Program/Erase cycles per block and 20 years of data retention. It also features program/erase suspend and resume capabilities, allowing reads from any block during a program suspend operation or reads/programs of other blocks during an erase suspend operation.
The device is available in a 56-TFSOP package, suitable for surface mount applications. It operates within a temperature range of -40°C to 85°C (Automotive Grade 6) and -40°C to 125°C (Automotive Grade 3). The memory also includes features like unlock bypass, block erase, chip erase, and software protection options including volatile, nonvolatile, and password protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage range for the M29W256GL7AN6E is 2.7V to 3.6V.
The M29W256GL7AN6E is housed in a 56-TFSOP (0.724", 18.40mm Width) package.
The M29W256GL7AN6E has an operating temperature range of -40°C to 85°C (TA) for automotive device grade (6) and -40°C to 125°C for automotive device grade (3).
The memory size of the M29W256GL7AN6E is 256Mbit.
The memory organization of this device is 32M x 8 or 16M x 16.
The random access time for the M29W256GL7AN6E is 70ns or 80ns.
Yes, the M29W256GL7AN6E is Halogen-free.