M29W256GL70N6E The M29W256GL70N6E is a 256Mb Parallel NOR Flash memory IC from Micron Technology. It features a 70ns access time and operates from a 2.7V to 3.6V supply.
Mfr Part #:

M29W256GL70N6E

Available from 2 distributors
Mfr Name: Micron Technology
Micron Technology
The M29W256GL70N6E is a 256Mb Parallel NOR Flash memory IC from Micron Technology. It features a 70ns access time and operates from a 2.7V to 3.6V supply.
✓ Total Stock: 3,450 pcs
$ Price Range: $1.28

M29W256GL70N6E Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,336 pcs
2336 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,114 pcs
1114 pcs On Request 1 On Request On Request 17+ On Request On Request

M29W256GL70N6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Halogen Free
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

M29W256GL70N6E Description

Short technical summary and product information.

This 256Mb Parallel NOR Flash memory IC, part number M29W256GL70N6E from Micron Technology, offers a 70ns random access time and asynchronous random/page read capabilities. It operates with a supply voltage ranging from 2.7V to 3.6V, with I/O buffers supporting 1.65V to 3.6V.

 

The memory is organized as 32M x 8 or 16M x 16 bits and features uniform blocks of 256 main blocks, each 128KB or 64-Kwords. It supports fast program and erase operations, with program times of 16µs per byte/word (typical) and chip program times of 10s with V PPH or 16s without.

 

Designed for reliability, the M29W256GL70N6E boasts 100,000 minimum Program/Erase cycles per block and 20 years of data retention. It is manufactured using 65nm single-level cell (SLC) process technology. The device is available in a 56-TSOP package, suitable for surface mounting.

 

This component is available in automotive grades, with operating temperature ranges of -40°C to +85°C or -40°C to +125°C, making it suitable for demanding automotive applications. It also offers features like program/erase suspend and resume capabilities, unlock bypass, and software protection options.

M29W256GL70N6E Quick Information

Product Type: Flash Memory
Series: M29W
Canonical Name: 256Mb 3V Embedded Parallel NOR Flash Memory
Subcategory: NOR Flash

M29W256GL70N6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W256GL70N6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W256GL70N6E Features

  • 256Mb Parallel NOR Flash memory IC.
  • 70ns random access time.
  • 2.7V to 3.6V supply voltage.
  • 56-TSOP surface mount package.
  • Automotive grade temperature options available.

M29W256GL70N6E Applications

  • Embedded systems requiring non-volatile storage.
  • Automotive control modules.
  • Industrial automation systems.
  • Consumer electronics devices.

M29W256GL70N6E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the supply voltage range of the M29W256GL70N6E?

2.7V to 3.6V.

What is the access time of this memory?

70ns typical random access time.

What package does the M29W256GL70N6E come in?

56-TSOP (TFSOP) surface-mount package, 0.724-inch body width.

What is the operating temperature range?

-40°C to +85°C (Grade 6) or -40°C to +125°C (Grade 3).

How many program/erase cycles does it support?

100,000 cycles per block.

What is the data retention period?

20 years typical.

Is the device halogen-free?

Yes, it is halogen-free.

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