| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,120 pcs
|
2120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Micron Technology M29W256GH7AZS6E is a high-performance 256Mbit Parallel NOR Flash memory device designed for embedded systems. It features asynchronous random and page read capabilities with access times as low as 25ns for pages and 70ns for random access.
This memory offers a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, with I/O buffers operating from 1.65V to 3.6V. It supports fast program commands with a 32-word write buffer and enhanced buffered program commands up to 256 words. The device is organized into uniform blocks of 128KB or 64-Kwords.
Packaged in a 64-FBGA (11x13) with surface mount technology, the M29W256GH7AZS6E is suitable for various applications. It boasts a program/erase cycle endurance of 100,000 minimum cycles per block and a data retention of 20 years typical. The device is available in automotive-grade temperature ranges, including -40°C to +85°C and -40°C to +125°C.
Key features include program/erase suspend and resume capabilities, unlock bypass, block erase, chip erase, and software protection options like volatile, nonvolatile, and password protection. An extended memory block is available for permanent, secure identification, programmed or locked at the factory or by the customer.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage for program, erase, and read operations is 2.7V to 3.6V.
The random access time is 70ns.
It is available in a 64-FBGA (11x13) package and a 64-LBGA package.
The operating temperature range is -40°C to 85°C (TA).
Yes, it is available in automotive device grades with temperature ranges of -40°C to +85°C and -40°C to +125°C.