| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,411 pcs
|
2411 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Access Time | |
| Halogen Free | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
The Micron Technology M29W256GH70ZS6E is a 256Mbit embedded parallel NOR flash memory. It operates with a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, with I/O buffers operating from 1.65V to 3.6V.
This memory device offers asynchronous random and page read access times as fast as 25ns for pages and 70ns for random access. It supports fast program commands with a 32-word write buffer and enhanced buffered program commands up to 256 words. The memory organization is 32M x 8 or 16M x 16, with uniform blocks of 128KB or 64-Kwords.
Designed for reliability, the M29W256GH70ZS6E boasts 100,000 minimum program/erase cycles per block and 20 years of data retention. It utilizes a 65nm single-level cell (SLC) process technology. The device is available in fortified BGA, TBGA, and TSOP packages, with this specific part number in a 64-FBGA (11x13) package suitable for surface mounting.
Environmental compliance includes RoHS and Halogen-free options. It operates within automotive-grade temperature ranges of -40°C to +85°C or -40°C to +125°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V.
64-FBGA (11x13mm) surface mount package.
Automotive Grade 6: -40°C to +85°C; Automotive Grade 3: -40°C to +125°C.
256Mbit (32M x 8 / 16M x 16).
70ns random access, 25ns page access.
100,000 minimum cycles per block.
20 years typical.