DistyParts Icon
M29W256GH70ZA6E The Micron M29W256GH70ZA6E is a 256Mbit Parallel NOR Flash Memory with a 70ns access time. It operates from a 2.7V to 3.6V supply voltage and comes in a 64-TBGA package.
Mfr Part #:

M29W256GH70ZA6E

Available from 1 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron M29W256GH70ZA6E is a 256Mbit Parallel NOR Flash Memory with a 70ns access time. It operates from a 2.7V to 3.6V supply voltage and comes in a 64-TBGA package.
✓ Total Stock: 60,000 pcs
$ Price Range: $1.28

M29W256GH70ZA6E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
60,000 pcs
On Request
60000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

M29W256GH70ZA6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Halogen Free
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Operating Voltage
Supplier Device Package
Technology
Voltage
Write Cycle Time
View Similar Products (0)

M29W256GH70ZA6E Description

Short technical summary and product information.

The Micron M29W256GH70ZA6E is a 256Mbit embedded parallel NOR Flash memory designed for high-performance applications. It features a fast asynchronous random and page read capability with access times as low as 25ns for page reads and 70ns for random reads.

 

The device operates with a supply voltage of 2.7V to 3.6V for VCC and 1.65V to 3.6V for VCCQ I/O buffers. It supports optional fast program commands with a 12V V PPH. The memory organization is 32M x 8 or 16M x 16, with uniform blocks of 128KB or 64-Kwords.

 

Key features include embedded program/erase algorithms, program/erase suspend and resume capabilities, and various software protection options like volatile, nonvolatile, and password protection. The memory also includes an extended memory block for secure identification. It is manufactured using a 65nm SLC process technology and is available in fortified BGA, TBGA, and TSOP packages.

 

This NOR Flash memory is suitable for applications requiring reliable non-volatile storage. It offers enhanced buffered program commands and fast block/chip erase functions. The device is compliant with JESD47H, providing 100,000 minimum program/erase cycles per block and 20 years of data retention.

M29W256GH70ZA6E Quick Information

Product Type: Parallel NOR Flash Memory
Canonical Name: Micron Technology M29W256GH70ZA6E 256Mbit Parallel NOR Flash Memory
Subcategory: Memory

M29W256GH70ZA6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W256GH70ZA6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W256GH70ZA6E Features

  • 256Mbit parallel NOR flash memory.
  • Fast 70ns random access time.
  • 2.7V to 3.6V supply voltage.
  • 64-TBGA surface mount package.
  • 100,000 program/erase cycles minimum.

M29W256GH70ZA6E Applications

  • Embedded systems requiring non-volatile storage.
  • Firmware storage applications.
  • Data logging systems.
  • Industrial control applications.

M29W256GH70ZA6E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the M29W256GH70ZA6E?

The core supply voltage (VCC) is 2.7V to 3.6V, and the I/O buffer supply voltage (VCCQ) is 1.65V to 3.6V.

What package does the M29W256GH70ZA6E come in?

It is available in a 64-TBGA (10x13 mm) surface-mount package.

What is the operating temperature range of the M29W256GH70ZA6E?

Automotive Grade 6 devices operate from -40°C to +85°C, and Automotive Grade 3 devices operate from -40°C to +125°C.

What is the memory organization of the M29W256GH70ZA6E?

The memory is organized as 32M x 8 or 16M x 16, with 256 uniform blocks of 128 KB or 64 Kwords each.

What is the program/erase endurance of the M29W256GH70ZA6E?

It offers a minimum of 100,000 program/erase cycles per block.

What is the data retention of the M29W256GH70ZA6E?

Typical data retention is 20 years.

Home
Account

Categories