| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,218 pcs
|
2218 pcs | On Request | 1 | On Request | On Request | 402 | On Request | On Request |
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The STMicroelectronics M29W200BT55N1 is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile Flash memory designed for read, erase, and reprogram operations using a single low voltage supply.
This memory device offers a fast 55ns access time and operates within a voltage range of 2.7V to 3.6V. It supports embedded Byte/Word and Multi-Block/Chip erase algorithms, along with an integrated Program/Erase controller. The memory is divided into 7 blocks: 1 Boot Block, 2 Parameter Blocks, and 4 Main Blocks, allowing for independent erasure and protection against accidental modification.
Key features include low power consumption, 100,000 program/erase cycles per block, and 20 years of data retention. The M29W200BT55N1 is available in a 48-TSOP package, suitable for surface mount applications.
This Flash memory is well-suited for various embedded systems requiring non-volatile data storage, such as firmware storage, configuration data, and data logging.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 2.7V to 3.6V.
It is available in a 48-TSOP and 48-TFSOP (0.724", 18.40mm Width) surface mount package.
The operating temperature range is 0°C to 70°C.
The memory size is 2 Mbit, organized as 256K x 8 or 128K x 16.
The maximum access time is 55 ns.
It supports 100,000 program/erase cycles per block.
The data retention period is 20 years.