| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,117 pcs
|
3117 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology M29W160ET is a 16Mb 3V Embedded Parallel NOR Flash memory. It features a supply voltage range of 2.7V to 3.6V for program, erase, and read operations. Access times are available at 70ns and 90ns, with a typical program time of 10µs per byte/word.
Memory organization includes 3 parameter and 31 main blocks, along with one boot block that can be located at the top or bottom. The device supports embedded byte/word program algorithms and offers erase suspend and resume capabilities, allowing read or program operations on other blocks during an erase suspend. It also features an UNLOCK BYPASS PROGRAM COMMAND for fast buffered/batch programming and a temporary block unprotect mode.
Key features include a 64-bit security code, low power consumption in standby and automatic modes, and 100,000 program/erase cycles per block. The M29W160ET is available in multiple packages: 48-pin TSOP (12mm x 20mm), 48-ball TFBGA (6mm x 8mm), and 64-ball FBGA (11mm x 13mm). Automotive grade parts are also available.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The supply voltage for the M29W160ET is 2.7V to 3.6V for program, erase, and read operations.
The M29W160ET has access times of 70ns and 90ns.
The M29W160ET is rated for 100,000 program/erase cycles per block.
The M29W160ET is organized with 3 parameter blocks, 31 main blocks, and 1 boot block (top or bottom location).
The M29W160ET is available in 48-pin TSOP, 48-ball TFBGA, and 64-ball FBGA packages.