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M29W128GL70N3E The Micron Technology M29W128GL70N3E is a 128Mbit Parallel NOR Flash Memory device. It features a 70ns access time and operates within a 2.7V to 3.6V supply range.
Mfr Part #:

M29W128GL70N3E

Available from 1 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology M29W128GL70N3E is a 128Mbit Parallel NOR Flash Memory device. It features a 70ns access time and operates within a 2.7V to 3.6V supply range.
✓ Total Stock: 1,152 pcs
$ Price Range: $1.28

M29W128GL70N3E Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
Non-Authorised Inventory information
1,152 pcs
On Request
1152 pcs On Request 1 On Request On Request 19+ On Request On Request
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M29W128GL70N3E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time
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M29W128GL70N3E Description

Short technical summary and product information.

The Micron Technology M29W128GL70N3E is a high-performance 128Mbit Parallel NOR Flash memory IC designed for embedded applications. It offers a fast 70ns random access time and asynchronous random/page read capabilities, with page access times of 25ns or 30ns.

 

This NOR Flash memory operates with a supply voltage of 2.7V to 3.6V for programming, erasing, and reading, and features I/O buffers operating from 1.65V to 3.6V. Optional 12V V PPH is available for faster programming. The memory is organized into uniform blocks, with 128 main blocks each 128-Kbytes or 64-Kwords in size. It supports program/erase suspend and resume functions, along with various command sets including unlock bypass, block erase, chip erase, and buffered programming.

 

Designed for reliability, the M29W128GL70N3E boasts a minimum of 100,000 Program/Erase cycles per block. It is specified for an automotive-grade temperature range of -40°C to +125°C. The device is available in a 56-TSOP (N) package measuring 14mm x 20mm, suitable for surface mount applications.

M29W128GL70N3E Quick Information

Product Type: Flash Memory
Canonical Name: Micron Technology M29W128GL70N3E Parallel NOR Flash Memory
Subcategory: NOR Flash

M29W128GL70N3E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W128GL70N3E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W128GL70N3E Features

  • 128Mbit Parallel NOR Flash memory.
  • Fast 70ns random access time.
  • Wide 2.7V to 3.6V operating voltage.
  • Automotive grade temperature range.
  • Durable with 100,000 Program/Erase cycles.

M29W128GL70N3E Applications

  • Ideal for embedded system storage.
  • Suitable for automotive applications.
  • Used in industrial control systems.
  • Reliable for data logging needs.

M29W128GL70N3E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the M29W128GL70N3E?

The core supply voltage is 2.7V to 3.6V, the I/O buffer supply is 1.65V to 3.6V, and an optional fast program supply of 12V is available.

What is the access time?

The typical access time is 70ns, with page access of 25-30ns and random access of 60-80ns.

What is the memory size and organization?

128Mbit organized as 16M x 8 or 8M x 16.

What is the operating temperature range?

-40°C to +125°C (automotive grade certified).

What package is it available in?

56-TSOP (N) surface mount package, 14mm x 20mm dimensions.

How many program/erase cycles does it support?

Minimum 100,000 program/erase cycles per block.

What is the program time?

16µs typical per byte/word and chip program in 5s with fast program supply or 8s without.

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