M29W128GH7AZS6E The Micron Technology M29W128GH7AZS6E is a 128Mbit Parallel NOR Flash Memory IC. It operates with a supply voltage of 2.7V to 3.6V and features a 70ns access time.
Mfr Part #:

M29W128GH7AZS6E

Available from 2 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology M29W128GH7AZS6E is a 128Mbit Parallel NOR Flash Memory IC. It operates with a supply voltage of 2.7V to 3.6V and features a 70ns access time.
✓ Total Stock: 4,717 pcs
$ Price Range: $1.28

M29W128GH7AZS6E Available from 2 distributors

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M29W128GH7AZS6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage
Write Cycle Time

M29W128GH7AZS6E Description

Short technical summary and product information.

The Micron Technology M29W128GH7AZS6E is a 128Mbit embedded Parallel NOR Flash memory device. It operates from a supply voltage range of 2.7V to 3.6V for program, erase, and read operations, with I/O buffers operating from 1.65V to 3.6V. This memory offers asynchronous random and page reads with access times as fast as 25ns for page access and 60ns for random access.

 

Key features include a 128Mbit memory size organized as 16M x 8 or 8M x 16. It supports fast program commands with a 32-word write buffer and enhanced buffered program commands for 256-word writes. The device also includes program/erase suspend and resume capabilities, allowing read operations from any block during a program suspend or read/program from another block during an erase suspend.

 

This NOR Flash memory is available in a 64-FBGA (11x13) package and is surface mountable. It operates within a temperature range of -40°C to 85°C (TA), with an automotive-grade temperature range of -40°C to +125°C specified in the datasheet. The memory organization consists of 128 uniform blocks, each 128-Kbytes or 64-Kwords. It boasts a minimum of 100,000 program/erase cycles per block.

M29W128GH7AZS6E Quick Information

Product Type: Parallel NOR Flash Memory
Canonical Name: Micron Technology M29W128GH7AZS6E 128Mbit Parallel NOR Flash Memory
Subcategory: NOR Flash

M29W128GH7AZS6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W128GH7AZS6E Estimated Pricing

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1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W128GH7AZS6E Features

  • 128Mbit Parallel NOR Flash memory.
  • 2.7V to 3.6V supply voltage.
  • Fast asynchronous read access times.
  • Program/erase suspend and resume.
  • 64-FBGA surface mount package.

M29W128GH7AZS6E Applications

  • Embedded systems storage.
  • Firmware code storage.
  • Data logging applications.
  • Automotive control modules.

M29W128GH7AZS6E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the M29W128GH7AZS6E?

The core supply voltage is 2.7V to 3.6V. The I/O buffer supply is 1.65V to 3.6V. An optional 12V fast program supply is available.

What packages are available for this part?

Available packages include 56-pin TSOP (14mm x 20mm), 64-ball TBGA (10mm x 13mm), 64-ball FBGA (11mm x 13mm), and 64-LBGA.

What is the operating temperature range?

Standard operating temperature is -40°C to +85°C. An automotive grade version is rated for -40°C to +125°C.

What is the memory size and organization?

The memory size is 128Mbit, organized as 16M x 8 or 8M x 16. It consists of 128 uniform blocks of 128 Kbytes or 64 Kwords each.

What is the program/erase endurance?

The device supports a minimum of 100,000 program/erase cycles per block.

What is the access time?

Random access time is 70ns (60ns available on request). Page access time is 25-30ns.

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