M29W128GH7AN6E The Micron Technology M29W128GH7AN6E is a 128Mbit Parallel NOR Flash memory device. It operates with a supply voltage of 2.7V to 3.6V and features a 70ns random access time.
Mfr Part #:

M29W128GH7AN6E

Available from 1 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology M29W128GH7AN6E is a 128Mbit Parallel NOR Flash memory device. It operates with a supply voltage of 2.7V to 3.6V and features a 70ns random access time.
✓ Total Stock: 6,584 pcs
$ Price Range: $1.28

M29W128GH7AN6E Available from 1 distributor

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6,584 pcs
6584 pcs On Request 1 On Request On Request 18+ On Request On Request

M29W128GH7AN6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

M29W128GH7AN6E Description

Short technical summary and product information.

This 128Mbit Parallel NOR Flash memory from Micron Technology, part number M29W128GH7AN6E, is designed for embedded applications requiring reliable non-volatile storage. It operates within a supply voltage range of 2.7V to 3.6V, with I/O buffers supporting 1.65V to 3.6V.

 

The device offers asynchronous random and page read capabilities, with random access times of 70ns and page access times of 25ns or 30ns. It supports fast program commands with a 32-word write buffer and enhanced buffered program commands for up to 256 words. Program time is typically 16µs per byte/word, with a chip program time of 5s with V PPH or 8s without.

 

Memory organization is in uniform blocks of 128Kbytes or 64Kwords. The M29W128GH7AN6E features program/erase suspend and resume capabilities, allowing read operations from any block during a program suspend or read/program from another block during an erase suspend. It also includes unlock bypass, block erase, chip erase, and write buffer commands for efficient data management.

 

Packaged in a 56-TSOP (0.724", 18.40mm Width) for surface mounting, this memory component is rated for an automotive-grade temperature range of -40°C to +125°C. It boasts a minimum of 100,000 program/erase cycles per block and includes features like V PP/WP# pin protection and software protection options including password protection.

M29W128GH7AN6E Quick Information

Product Type: Flash Memory
Canonical Name: 128Mb 3V Embedded Parallel NOR Flash Memory
Subcategory: NOR Flash

M29W128GH7AN6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W128GH7AN6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W128GH7AN6E Features

  • 128Mbit Parallel NOR Flash memory
  • 70ns random access time
  • 2.7V to 3.6V supply voltage
  • Automotive grade temperature range
  • 56-TSOP surface mount package

M29W128GH7AN6E Applications

  • Embedded system storage
  • Automotive control modules
  • Industrial automation systems
  • Data logging applications

M29W128GH7AN6E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage range of the M29W128GH7AN6E?

The core supply voltage range is 2.7V to 3.6V, and the I/O buffer supply range is 1.65V to 3.6V.

What package is the M29W128GH7AN6E available in?

It is available in a 56-TFSOP (0.724", 18.40mm Width) surface mount package, also known as 56-TSOP.

What is the operating temperature range?

-40°C to +125°C, suitable for automotive applications.

What is the access time of the M29W128GH7AN6E?

Page access time is 25ns typical, 30ns minimum; random access time is 70ns typical.

How many program/erase cycles does the M29W128GH7AN6E support?

100,000 program/erase cycles per block.

What is the memory organization?

16M x 8 or 8M x 16, organized into 128 uniform blocks of 128 Kbytes or 64 Kwords each.

What is the program time?

16µs per byte/word typical; chip program time is 5 seconds with VPPH or 8 seconds without.

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