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M29W128GH70ZS6E The Micron Technology M29W128GH70ZS6E is a 128Mbit Parallel NOR Flash Memory. It features a 70ns access time and operates within a 2.7V to 3.6V supply voltage range.
Mfr Part #:

M29W128GH70ZS6E

Available from 1 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology M29W128GH70ZS6E is a 128Mbit Parallel NOR Flash Memory. It features a 70ns access time and operates within a 2.7V to 3.6V supply voltage range.
✓ Total Stock: 5,333 pcs
$ Price Range: $1.28

M29W128GH70ZS6E Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,333 pcs
On Request
5333 pcs On Request 1 On Request On Request 18+ On Request On Request
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M29W128GH70ZS6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
SVHC Present
Supplier Device Package
Technology
Voltage
Write Cycle Time
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M29W128GH70ZS6E Description

Short technical summary and product information.

The Micron Technology M29W128GH70ZS6E is a 128Mbit embedded Parallel NOR Flash memory device. It offers asynchronous random and page read access times as fast as 25ns. The device operates with a supply voltage ranging from 2.7V to 3.6V for program, erase, and read operations, with I/O buffers operating from 1.65V to 3.6V.

 

Key features include a 70ns random access time and a program time of 16µs per byte/word. The memory is organized into uniform blocks, with options for 128-Kbyte or 64-Kword sizes. It supports program/erase suspend and resume capabilities, along with unlock bypass, block erase, and chip erase commands. The device also includes software protection features like volatile, nonvolatile, and password protection.

 

This flash memory is available in RoHS compliant packages including 56-pin TSOP, 64-ball TBGA, and 64-ball FBGA. The 64-FBGA (11x13) package is specified for surface mount applications. It is designed for a wide operating temperature range, with an automotive grade option available from -40°C to +125°C.

M29W128GH70ZS6E Quick Information

Product Type: Flash Memory
Canonical Name: Micron Technology M29W128GH70ZS6E Parallel NOR Flash Memory
Subcategory: NOR Flash

M29W128GH70ZS6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W128GH70ZS6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W128GH70ZS6E Features

  • 128Mbit Parallel NOR Flash memory.
  • Fast asynchronous read access times.
  • Operates from 2.7V to 3.6V supply.
  • Available in 64-FBGA package.
  • Automotive grade temperature option available.

M29W128GH70ZS6E Applications

  • Embedded systems requiring non-volatile storage.
  • Applications needing fast read access.
  • Designs with limited board space.
  • Automotive control systems.

M29W128GH70ZS6E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the supply voltage range for the M29W128GH70ZS6E?

The supply voltage range is 2.7V to 3.6V.

What is the operating temperature range?

The standard operating temperature range is -40°C to 85°C.

What is the memory size and organization?

The memory size is 128Mbit, organized as 16M x 8 or 8M x 16.

What is the random access time?

The typical random access time is 70ns to 80ns.

What is the program/erase cycle endurance?

The device supports a minimum of 100,000 program/erase cycles per block.

What package is the M29W128GH70ZS6E available in?

The device is available in a 64-FBGA (11x13) package.

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