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M29W128GH70N6E

The STMicroelectronics M29W128GH70N6E is a 128Mb 3V embedded Parallel NOR Flash memory. It offers a wide operating temperature range suitable for automotive applications.

✓ Total Stock: 135 pcs

M29W128GH70N6E Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	135 pcs On Request	135 pcs	On Request	1	On Request	On Request	1327+	On Request	On Request

M29W128GH70N6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	STMicroelectronics
Mounting Type	Surface Mount
Operating Temperature	-40°C to +125°C
Package / Case	FBGA

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M29W128GH70N6E Description

Short technical summary and product information.

The M29W128GH70N6E from STMicroelectronics is a high-performance 128Mb Parallel NOR Flash memory designed for embedded applications. It operates with a supply voltage range of 2.7V to 3.6V for programming, erasing, and reading, with I/O buffers operating from 1.65V to 3.6V. This device supports asynchronous random and page reads with access times as low as 25ns for pages and 70ns for random access.

Key features include enhanced buffered program commands for faster write operations and program/erase suspend capabilities, allowing read operations from other blocks during suspension. The memory is organized into uniform blocks, each 128 Kbytes or 64 Kwords. It boasts a minimum of 100,000 program/erase cycles per block, ensuring reliability.

Designed for demanding environments, the M29W128GH70N6E is certified for automotive-grade temperatures, operating from -40°C to +125°C. It is available in RoHS compliant packages including 56-pin TSOP, 64-ball TBGA, and 64-ball FBGA. This flash memory is suitable for applications requiring reliable non-volatile storage in harsh conditions.

M29W128GH70N6E Quick Information

Product Type: Parallel NOR Flash Memory

Series: M29W

Canonical Name: 128Mb 3V Embedded Parallel NOR Flash Memory

Subcategory: Parallel NOR

M29W128GH70N6E Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

M29W128GH70N6E Features

128Mb density Parallel NOR Flash memory.
Wide 2.7V to 3.6V supply voltage.
Fast asynchronous read access times.
Automotive grade temperature range (-40°C to +125°C).
Available in TSOP, TBGA, and FBGA packages.

M29W128GH70N6E Applications

Embedded systems requiring non-volatile storage.
Automotive control modules and systems.
Industrial applications with harsh environments.
Consumer electronics requiring reliable memory.

M29W128GH70N6E FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating voltage range of the M29W128GH70N6E?

Core supply voltage is 2.7V to 3.6V; I/O buffer voltage is 1.65V to 3.6V.

What packages are available for this device?

TSOP (14mm x 20mm), TBGA (10mm x 13mm), and FBGA (11mm x 13mm).

What is the operating temperature range?

-40°C to +125°C (automotive grade certified).

What is the memory organization?

128Mb, arranged as 128 uniform blocks of 128 Kbytes (64 Kwords) each.

How many program/erase cycles does each block support?

Minimum 100,000 program/erase cycles per block.

What are the typical program times?

16µs per byte/word typical; chip program time is 5s with optional 12V VPPH or 8s without.

What is the page access time?

Page read access time is 25ns to 30ns; random access time is 60ns to 80ns.