M29W128GH70N6E The Micron Technology M29W128GH70N6E is a 128Mbit Parallel NOR Flash memory device. It features a 70ns access time and operates within a 2.7V to 3.6V supply voltage range.
Mfr Part #:

M29W128GH70N6E

Available from 2 distributors
Mfr Name: Micron Technology
Micron Technology
The Micron Technology M29W128GH70N6E is a 128Mbit Parallel NOR Flash memory device. It features a 70ns access time and operates within a 2.7V to 3.6V supply voltage range.
✓ Total Stock: 5,350 pcs
$ Price Range: $1.28

M29W128GH70N6E Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,100 pcs
5100 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
250 pcs
250 pcs On Request 1 On Request On Request 13+ On Request On Request

M29W128GH70N6E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage
Write Cycle Time

M29W128GH70N6E Description

Short technical summary and product information.

The M29W128GH70N6E from Micron Technology is a high-performance 128Mbit Parallel NOR Flash memory IC. Designed for demanding applications, it offers asynchronous random and page read access times as fast as 25ns for pages and 70ns for random access.

 

This device operates with a supply voltage of 2.7V to 3.6V, with I/O buffers supporting 1.65V to 3.6V. It features embedded byte/word program algorithms and supports program/erase suspend and resume capabilities, allowing read operations from any block during a program suspend or read/program from another block during an erase suspend. The memory organization is 16M x 8 or 8M x 16, with uniform blocks of 128 Kbytes each.

 

Available in a 56-TSOP package, the M29W128GH70N6E is suitable for surface mount applications. It boasts a minimum of 100,000 program/erase cycles per block and an automotive-grade operating temperature range of -40°C to +125°C. Additional features include unlock bypass, block erase, chip erase, and software protection options like password protection.

M29W128GH70N6E Quick Information

Product Type: Parallel NOR Flash Memory
Series: M29W
Canonical Name: Micron Technology M29W128GH70N6E Parallel NOR Flash Memory
Subcategory: NOR Flash

M29W128GH70N6E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

M29W128GH70N6E Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M29W128GH70N6E Features

  • 128Mbit Parallel NOR Flash memory
  • 70ns random access time
  • 2.7V to 3.6V supply voltage
  • Automotive grade temperature range
  • 56-TSOP surface mount package

M29W128GH70N6E Applications

  • Embedded system storage
  • Automotive applications
  • Industrial control systems
  • Data logging devices

M29W128GH70N6E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the supply voltage range for the M29W128GH70N6E?

The core supply voltage is 2.7V to 3.6V, and the I/O buffer supply voltage is 1.65V to 3.6V.

What packages are available for the M29W128GH70N6E?

The device is available in 56-pin TSOP (including 56-TFSOP) and 64-ball TBGA/FBGA packages, all surface mount.

What is the operating temperature range?

The standard operating temperature range is -40°C to +85°C, with an automotive grade range of -40°C to +125°C.

What is the access time?

Typical random access time is 70ns, and page access time is 25ns (also available 30ns).

How many program/erase cycles does the M29W128GH70N6E support?

It supports a minimum of 100,000 program/erase cycles per block.

What is the memory organization?

Organized as 16M x 8 bits or 8M x 16 bits, with 128 main blocks of 128 Kbytes each (or 64 Kwords each).

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