| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,336 pcs
|
2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron M29F800DB70M6E is a high-performance 8Mbit Parallel NOR Flash Memory integrated circuit designed for various storage applications. It offers a fast access time of 70 ns and a write cycle time of 70 ns, ensuring efficient data operations.
This memory device operates within a voltage range of 4.5V to 5.5V and is specified for an operating temperature range of -40°C to 85°C (TA). The memory organization is available as 1M x 8 or 512K x 16, providing flexibility for different system requirements.
Packaged in a 44-SOIC (0.525", 13.34mm Width) format, the M29F800DB70M6E is designed for surface mounting. Its non-volatile FLASH - NOR technology makes it suitable for applications requiring reliable data storage and quick read access.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 8 Mbit.
The access time is 70 ns.
The operating voltage range is 4.5V to 5.5V.
The operating temperature range is -40°C to 85°C (TA).
It is in a 44-SOIC (0.525", 13.34mm Width) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.