| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,722 pcs
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1722 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Micron Technology M29F160FB55N3E2 is a 16Mbit Parallel NOR Flash memory device designed for embedded applications requiring reliable non-volatile storage. It operates with a supply voltage of 4.5V to 5.5V and offers a fast access time of 55ns.
This flash memory features embedded byte/word program algorithms and supports erase suspend and resume modes. It is rated for 100,000 program/erase cycles per block. The device is available in a 48-TSOP I package, suitable for surface mount applications.
Designed for automotive applications, this component is available in different temperature grades, including Automotive Grade 3 (-40°C to +125°C) and Automotive Grade 6 (-40°C to +85°C). It is AEC-Q100 certified.
The memory organization is 2M x 8 or 1M x 16, providing flexibility for various system designs. The technology used is 110nm NOR Flash.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The M29F160FB55N3E2 has a memory size of 16Mbit.
The supply voltage range is 4.5V to 5.5V.
The access time is 55ns.
The M29F160FB55N3E2 is available in a 48-TSOP I surface-mount package.
The operating temperature range is -40°C to +125°C (automotive grade 3) or -40°C to +85°C (automotive grade 6).
It supports 100,000 program/erase cycles per block.