SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,045 pcs
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1045 pcs | On Request | 1 | On Request | On Request | 513 | On Request | On Request | |
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272 pcs
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272 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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| Tape & Reel |
The STMicroelectronics M29F040B-90K1 is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased, and reprogrammed using a single 5V supply. On power-up, it defaults to Read mode, functioning similarly to a ROM or EPROM.
This memory is divided into 8 uniform 64 Kbyte blocks, allowing for independent erasure. Each block can also be independently protected to prevent accidental modification. Key electrical specifications include an access time of 45ns and a typical programming time of 8 μs per byte. It operates with a single 5V ±10% supply voltage for all operations.
The M29F040B-90K1 is offered in a 32PLCC package. It boasts 100,000 program/erase cycles per block and 20 years of data retention. The device includes an embedded program/erase controller and supports erase suspend and resume modes for flexible operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.03 | $10.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The M29F040B-90K1 has a memory size of 4 Mbit.
The access time for the M29F040B-90K1 is 45ns.
The typical programming time per byte is 8 μs.
The M29F040B-90K1 operates with a single 5V supply.
The operating temperature ranges are 0°C to 70°C, -40°C to 85°C, and -40°C to 125°C, depending on the specific option.
Each block can withstand 100,000 program/erase cycles.
The data retention period is 20 years.
