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M27C801-100F6 The STMicroelectronics M27C801-100F6 is an 8Mbit UV EPROM memory IC with a parallel interface. It operates with a supply voltage of 4.5V to 5.5V and has an access time of 100 ns.
Mfr Part #:

M27C801-100F6

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics M27C801-100F6 is an 8Mbit UV EPROM memory IC with a parallel interface. It operates with a supply voltage of 4.5V to 5.5V and has an access time of 100 ns.
✓ Total Stock: 3,018 pcs
$ Price Range: $1.28

M27C801-100F6 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
2,818 pcs
On Request
2818 pcs On Request 1 On Request On Request 06+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
200 pcs
On Request
200 pcs On Request 1 On Request On Request 06+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

M27C801-100F6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Technology
Voltage
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M27C801-100F6 Description

Short technical summary and product information.

The STMicroelectronics M27C801-100F6 is a non-volatile memory integrated circuit featuring 8Mbit of storage capacity organized as 1M x 8 bits. This UV EPROM utilizes a parallel interface for data access and operates within a supply voltage range of 4.5V to 5.5V. It offers an access time of 100 ns, making it suitable for various memory applications.

 

The device is designed for through-hole mounting and comes in a 32-CDIP package with a window, facilitating UV erasure for reprogramming. The operating temperature range is specified from -40°C to 85°C.

 

Key electrical characteristics include a typical active current of 35 mA at 5 MHz and a standby current of 100 µA. Programming requires a voltage of 12.75 V ± 0.25 V, with a programming time of 50 µs per word. The datasheet also indicates an access time of 55 ns under specific conditions, which may differ from the manufacturer page specification.

M27C801-100F6 Quick Information

Product Type: EPROM
Canonical Name: STMicroelectronics M27C801-100F6 8Mbit UV EPROM
Subcategory: UV EPROM

M27C801-100F6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3 (168 Hours)
REACH Status: REACH Unaffected

M27C801-100F6 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

M27C801-100F6 Features

  • 8Mbit memory size, 1M x 8 organization
  • Parallel memory interface
  • 100 ns maximum access time
  • 4.5V to 5.5V supply voltage
  • Through Hole mounting in 32-CDIP package

M27C801-100F6 Applications

  • Suitable for data storage
  • Used in embedded systems
  • Ideal for firmware storage
  • Applications requiring UV erasability

M27C801-100F6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the M27C801-100F6?

The operating voltage is 5V ±10% (4.5V to 5.5V) during read operation.

What package is this EPROM available in?

It is available in a 32-CDIP (0.600" | 15.24mm) window, through-hole, frit seal with window package.

What is the operating temperature range?

-40°C to 85°C (TA).

What is the memory size and organization?

8Mbit, organized as 1M x 8.

What type of memory is this?

A non-volatile parallel EPROM with UV-erasure technology.

What is the access time of the M27C801-100F6?

The datasheet specifies 55ns, while the manufacturer page lists 100ns.

What is the programming voltage and time?

Programming voltage is 12.75V ±0.25V, with a programming time of 50µs per word.

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