| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
261,000 pcs
|
261000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Diode Configuration | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The M1MA152WAT1G is a common anode silicon epitaxial planar dual switching diode designed for ultra high speed switching applications. It is housed in the SC-59 package, optimized for low power surface mount designs. Key electrical ratings include a maximum reverse voltage of 80V (for the M1MA152WAT1 version) and an average rectified current of 100mA for a single diode (150mA for dual operation). The forward voltage is 1.2V maximum at 100mA, and reverse recovery time is 10ns maximum under test conditions of IF=10mA, VR=6V, RL=100Ω. The device also features low capacitance of 15pF maximum at 0V and 1MHz. Power dissipation is rated at 200mW with a maximum junction temperature of 150°C.
The M1MA152WAT1G is supplied in tape and reel packaging with 3000 units per reel and is Pb-Free. According to the manufacturer datasheet, this part is discontinued and not recommended for new designs. Designers should contact onsemi for alternative recommendations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.23 | $0.23 |
| 10+ | $0.14 | $0.14 |
| 100+ | $0.09 | $0.09 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 3,000+ | $0.04 | $0.04 |
| 6,000+ | $0.04 | $0.04 |
| 24,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V.
100 mA.
1.2 V maximum at 100 mA.
10 ns maximum (IF=10 mA, VR=6 V, RL=100 Ω).
SC-59 surface-mount package.
1 pair common anode.
Yes, it is Pb-Free.