M1MA151WAT1G M1MA151WAT1G is a dual common anode silicon switching diode from On Semiconductor, rated for 40V reverse voltage and 100mA forward current per diode, with a fast 10ns reverse recovery time.
Mfr Part #:

M1MA151WAT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
M1MA151WAT1G is a dual common anode silicon switching diode from On Semiconductor, rated for 40V reverse voltage and 100mA forward current per diode, with a fast 10ns reverse recovery time.
✓ Total Stock: 272,950 pcs
$ Price Range: $0.02 - $0.17

M1MA151WAT1G Available from 1 distributor

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272,950 pcs
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M1MA151WAT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Diode Configuration
Medical Grade
Mounting Type
Operating Temperature
Reverse Recovery Time (trr)
SVHC Present
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Voltage

M1MA151WAT1G Description

Short technical summary and product information.

The M1MA151WAT1G is a common anode silicon epitaxial planar dual switching diode from On Semiconductor, designed for ultra high speed switching applications. It features a maximum reverse voltage of 40V and a forward current rating of 100mA per diode (150mA when both diodes conduct). The device offers a fast reverse recovery time of 10 ns and low diode capacitance of 15 pF, making it suitable for high-speed signal switching.

 

This dual diode is housed in the SC-59 surface mount package (also known as TO-236-3 or SOT-23-3), which is designed for low power surface mount applications. The part is Pb-Free and RoHS3 compliant, and is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel.

 

Key electrical characteristics include a maximum forward voltage of 1.2V at 100mA, a reverse leakage current of 100 nA at 35V, and a power dissipation of 200 mW. The device operates over a junction temperature range of -55°C to +150°C.

M1MA151WAT1G Quick Information

Product Type: Dual Switching Diode Array
Series: M1MA151WAT1
Canonical Name: M1MA151WAT1G Common Anode Silicon Dual Switching Diode
Subcategory: Rectifier Diode Arrays

M1MA151WAT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

M1MA151WAT1G Estimated Pricing

Qty Low High
1+ $0.17 $0.17
10+ $0.11 $0.11
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03
24,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

M1MA151WAT1G Features

  • Dual common anode silicon switching diode.
  • Fast reverse recovery time of 10 ns.
  • Low diode capacitance of 15 pF.
  • Rated for 40V reverse voltage and 100mA forward current.
  • Pb-Free and RoHS3 compliant surface mount package.

M1MA151WAT1G Applications

  • Ideal for ultra high speed switching circuits.
  • Used in low power surface mount applications.
  • Suitable for signal switching and clamping.
  • Common anode configuration simplifies PCB layout.

M1MA151WAT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the M1MA151WAT1G?

The maximum reverse voltage (VR) is 40V.

What is the forward current rating per diode?

The maximum forward current per single diode is 100 mA. When both diodes conduct, the maximum is 150 mA.

What is the reverse recovery time?

The maximum reverse recovery time (trr) is 10 ns, tested at IF = 10 mA, VR = 6 V, RL = 100 Ω, Irr = 0.1 IR.

What package does the M1MA151WAT1G come in?

It is available in the SC-59 surface mount package, also known as TO-236-3 or SOT-23-3.

What is the forward voltage at 100 mA?

The maximum forward voltage is 1.2 V at IF = 100 mA.

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