| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,230 pcs
|
1230 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Capacitance | |
| Diode Configuration | |
| Forward Voltage | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The M1MA151WAT1 is a common anode silicon epitaxial planar dual switching diode designed for ultra high speed switching applications. It features maximum reverse voltage of 40V and forward current rating of 100mA per diode (150mA for both diodes combined). The device exhibits fast reverse recovery time of less than 10ns and low diode capacitance of 15pF, making it suitable for high-speed signal switching.
The diode array is offered in the compact SC-59 surface mount package (also known as SOT-23-3 or TO-236-3), which is optimized for low power applications. Maximum power dissipation is 200mW, and the operating junction temperature range is -55 to +150°C. The part is supplied in tape and reel packaging with 3000 units per reel.
| Qty | Low | High |
|---|---|---|
| 24,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VR) is 40V.
The maximum continuous forward current per single diode is 100mA, and for dual operation it is 150mA.
The device is offered in the SC-59 surface mount package, also known as SOT-23-3 or TO-236-3.
Maximum reverse recovery time (trr) is 10ns under specified test conditions (IF=10mA, VR=6V, RL=100Ω, Irr=0.1 IR).
The storage temperature range (Tstg) is -55 to +150°C.