| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,953 pcs
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7953 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Memory Type | |
| Mounting Type | |
| Package / Case | |
| SVHC Present | |
| Voltage Supply |
The ESMT M12L16161A-7T is a 16,777,216-bit synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits. Fabricated with high-performance CMOS technology, this SDRAM operates at a maximum frequency of 143MHz and utilizes a JEDEC standard 3.3V power supply.
Key features include dual bank operation, programmable CAS Latency (2 & 3), and programmable Burst Length (1, 2, 4, 8 & full page). All inputs are sampled at the positive-going edge of the system clock. The device supports Burst Read and Single-bit Write operations, with DQM for masking. Auto and self-refresh capabilities are included, along with a 32ms refresh period (2K cycle).
Designed for high bandwidth, high-performance memory system applications, the M12L16161A-7T allows for precise cycle control through its synchronous design. I/O transactions are possible on every clock cycle. The device is packaged in a 50-pin TSOP(II) (400mil x 825mil) with a 0.8mm pin pitch and is suitable for surface mounting.
This component offers flexibility for various memory system designs due to its range of operating frequencies, programmable burst length, and programmable latencies.
The maximum clock frequency for the M12L16161A-7T is 143MHz.
The M12L16161A-7T operates at a 3.3V power supply.
This SDRAM supports CAS Latency values of 2 and 3.
The programmable Burst Lengths for this device are 1, 2, 4, and 8, along with full page.
The M12L16161A-7T is available in a TSOP(II) package.