| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operation | |
| SVHC Present |
The M11B416256A-35J from Elite Semiconductor Memory Technology (EliteMT) is a 256K x 16 DRAM utilizing EDO (Extended Data-Output) page mode access. This memory component is designed for a single 5V (±10%) power supply, making it suitable for various applications requiring reliable memory.
Key features include TTL-compatible inputs and outputs, ensuring easy integration with digital logic systems. The DRAM supports byte and word read/write operations. It offers a 512-cycle refresh in 8ms, with refresh modes including RAS only, CAS BEFORE RAS (CBR), and HIDDEN refresh.
Performance specifications include key AC parameters such as tRAC up to 40ns, tCAC up to 11ns, tRC up to 75ns, and tPC up to 16ns. The JEDEC standard pinout simplifies board design and component replacement.
This component is classified under the DRAM category and is suitable for applications needing efficient data access and storage.
The M11B416256A-35J DRAM has a 256K x 16 organization.
The M11B416256A-35J uses EDO (Extended Data-Output) access mode.
The M11B416256A-35J operates on a single 5V power supply.
It features 512-cycle refresh in 8ms, with RAS only, CAS BEFORE RAS (CBR), and HIDDEN refresh modes.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.