| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Lite-4206 is an NPN silicon phototransistor housed in a clear, lensed plastic T1 package. This component is designed for infrared applications and features a lens for high sensitivity, providing an acceptance half angle of 10 degrees. It is mechanically and spectrally matched to the LTE-4206 series of infrared emitting diodes.
Key electrical specifications include a maximum collector-emitter voltage of 30V and a maximum power dissipation of 100mW. The operating temperature range is from -40°C to +85°C, with a storage temperature range of -55°C to +100°C. The phototransistor exhibits a typical on-state collector current of 4mA at 940nm and a maximum dark current of 100nA.
This phototransistor is mounted using the Through-Hole Technology (THT) method and comes in a standard package of 1000 pieces. Its peak wavelength sensitivity is 900nm, with a typical viewing angle of 40 degrees and a typical dark current of 0.1µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the LTR-4206 is 30V.
The LTR-4206 phototransistor operates within a temperature range of -40°C to +85°C.
The peak wavelength sensitivity of the LTR-4206 is 900nm.
The LTR-4206 phototransistor is mounted using the THT (Through-Hole Technology) method.
The standard package quantity for the LTR-4206 is 1000 pieces, supplied in a bag.