| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The LTE3401LX from NXP Semiconductors is a high-gain Low-Noise Amplifier (LNA) with a bypass switch, suitable for LTE receiver applications. It is available in a compact 6-pin XSON package, measuring 1.1 mm x 0.7 mm.
This MMIC delivers optimized gain of 18.4 dB and a low noise figure of 0.63 dB, crucial for sensitivity improvement in primary and diversity applications. Its high linearity ensures required receive sensitivity in FDD systems. The device supports an operating frequency range from 617 MHz to 960 MHz, with specific optimization for 703 MHz to 960 MHz and tuning capability for 617 MHz to 652 MHz (B71).
Key electrical characteristics include a high input 1 dB compression point of -7.8 dBm and an in-band IP3i of +0.7 dBm. The supply voltage ranges from 1.5 V to 3.1 V, with a typical supply current of 10.3 mA in gain mode. A bypass mode is available for lower power consumption, reducing current to less than 1 μA with a bypass switch insertion loss of 1.8 dB.
The LTE3401LX features integrated RF supply decoupling and temperature-stabilized bias for simplified design. It requires only one external matching inductor and has integrated output matching. ESD protection is provided on all pins. The component is internally AC coupled and requires external DC blocking capacitors for input and output.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The LTE3401LX operates from 617 MHz to 960 MHz.
The typical noise figure is 0.63 dB.
The gain is 18.4 dB.
The supply voltage ranges from 1.5 V to 3.1 V.
The LTE3401LX is supplied in a 6-XSON package.